Published January 1982
| Version v1
Journal article
High field magneto-transport measurements in GaAs-GaAlAs multilayers
Creators
- 1. Oxford Univ. (UK). Clarendon Lab.
- 2. Institut National des Sciences Appliquees (INSA), 31 - Toulouse (France). Lab. de Physique des Solides
Description
Measurements have been made of magneto-transport in GaAs-Gasub(1-x)Alsub(x)As multi-layers with magnetic fields up to 35 T. At high fields (22 T) a strong, temperature dependent spin splitting of the N = O Landau level is observed. This indicates a strong many-body enhancement of the g factor, since the bare spin splitting (0.7 mV) is much less than the broadening parameter GAMMA (5.3 meV) while the strong temperature dependence below 4.2 K is clear evidence for a temperature dependent enhancement. In the ultra-quantum regime (ν = 2πn/20 approx. <= 1) the magnetoresistance rises very rapidly in contrast to the predictions of independent electron theories and exhibits a weak thermal activation. (orig.)
Additional details
Publishing Information
- Journal Title
- Surf. Sci.
- Journal Volume
- 113
- Journal Issue
- 1-3
- Series
- Surf. Sci.
- Journal Page Range
- 290-294
- ISSN
- 0039-6028
Conference
- Title
- 4. International conference on electronic properties of two-dimensional systems.
- Dates
- 24 - 28 Aug 1981.
- Place
- New London, NH, USA.
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- Netherlands
- INIS RN
- 13681675
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference, Numerical Data
- Descriptors DEI
- ALUMINIUM ARSENIDES; ELECTRON MOBILITY; EXPERIMENTAL DATA; GALLIUM ARSENIDES; HALL EFFECT; INTERFACES; MAGNETIC FIELDS; MAGNETORESISTANCE; TEMPERATURE DEPENDENCE; ULTRALOW TEMPERATURE
- Descriptors DEC
- ALUMINIUM COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; DATA; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; GALLIUM COMPOUNDS; INFORMATION; MOBILITY; NUMERICAL DATA; PARTICLE MOBILITY; PHYSICAL PROPERTIES