Published June 1992 | Version v1
Journal article Metadata-only

Influence of heavy ion charge fluctuation on process of high energy bombardment

Creators

Description

A model of high-energy ion implantation is formulated with regard to the heavy ion charge state fluctuations. Results of simulating different experiments through numerical solution of the direct kinetic equation are presented

Additional details

Additional titles

Original title (Russian)
Влияние флуктуации зарядов тяжелых ионов на процесс высокоэнергетической ионной имплантации

Publishing Information

Journal Title
Izvestiya Akademii Nauk - Rossijskaya Akademiya Nauk. Seriya Fizicheskaya
Journal Volume
56
Journal Issue
6
Journal Page Range
p. 177-181.
ISSN
0367-6765

Conference

Title
10. All-Union conference on interaction of ions with surfaces.
Dates
7 Sep 1991.
Place
Moscow (Russian Federation).

INIS

Country of Publication
Russian Federation
Country of Input or Organization
Russian Federation
INIS RN
25005526
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
CHARGE STATES; COMPUTERIZED SIMULATION; CRYSTAL DEFECTS; HEAVY IONS; ION CHANNELING; ION IMPLANTATION; KINETIC EQUATIONS; MEV RANGE 100-1000; NUMERICAL SOLUTION; PHOSPHORUS IONS; PHYSICAL RADIATION EFFECTS; SILICON; SPATIAL DISTRIBUTION
Descriptors DEC
CHANNELING; CHARGED PARTICLES; CRYSTAL STRUCTURE; DISTRIBUTION; ELEMENTS; ENERGY RANGE; EQUATIONS; IONS; MEV RANGE; RADIATION EFFECTS; SEMIMETALS; SIMULATION