Published July 1994 | Version v1
Journal article

High temperature Hall measurements on cerium dioxide thin films

  • 1. Siemens AG, Munich (Germany). Central Research Labs.

Description

Simultaneous Hall and conductivity measurements have been performed on sputtered polycrystalline thin films and on bulk ceramic specimens of nearly stoichiometric CeO2 in the temperature range between 900 and 1,040 C. The measurements have been performed in air using low-frequency alternating current. In the case of the bulk ceramic specimens, an upper limit for the carrier mobility of ≤ 0.2 cm2/(V·s) has been obtained, which is in accordance with data from the literature for bulk samples. The conductivity of the thin films is in accordance with data from the literature for bulk ceramics. The carrier density derived from the Hall measurements increases with increasing temperature, whereas the Hall mobility decreases with increasing temperature. These values differ from literature data for bulk ceramic specimens. The difference may be due to the small grain diameters in the 1-μm-thick thin films

Additional details

Publishing Information

Journal Title
Journal of the American Ceramic Society
Journal Volume
77
Journal Issue
7
Journal Page Range
p. 1969-1972.
ISSN
0002-7820
CODEN
JACTAW

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
26010062
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
CERAMICS; CERIUM OXIDES; ELECTRIC CONDUCTIVITY; HALL EFFECT; SEMICONDUCTOR MATERIALS; TEMPERATURE DEPENDENCE
Descriptors DEC
CERIUM COMPOUNDS; CHALCOGENIDES; ELECTRICAL PROPERTIES; MATERIALS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; RARE EARTH COMPOUNDS