High temperature Hall measurements on cerium dioxide thin films
- 1. Siemens AG, Munich (Germany). Central Research Labs.
Description
Simultaneous Hall and conductivity measurements have been performed on sputtered polycrystalline thin films and on bulk ceramic specimens of nearly stoichiometric CeO2 in the temperature range between 900 and 1,040 C. The measurements have been performed in air using low-frequency alternating current. In the case of the bulk ceramic specimens, an upper limit for the carrier mobility of ≤ 0.2 cm2/(V·s) has been obtained, which is in accordance with data from the literature for bulk samples. The conductivity of the thin films is in accordance with data from the literature for bulk ceramics. The carrier density derived from the Hall measurements increases with increasing temperature, whereas the Hall mobility decreases with increasing temperature. These values differ from literature data for bulk ceramic specimens. The difference may be due to the small grain diameters in the 1-μm-thick thin films
Additional details
Publishing Information
- Journal Title
- Journal of the American Ceramic Society
- Journal Volume
- 77
- Journal Issue
- 7
- Journal Page Range
- p. 1969-1972.
- ISSN
- 0002-7820
- CODEN
- JACTAW
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 26010062
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CERAMICS; CERIUM OXIDES; ELECTRIC CONDUCTIVITY; HALL EFFECT; SEMICONDUCTOR MATERIALS; TEMPERATURE DEPENDENCE
- Descriptors DEC
- CERIUM COMPOUNDS; CHALCOGENIDES; ELECTRICAL PROPERTIES; MATERIALS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; RARE EARTH COMPOUNDS