Published 1994 | Version v1
Book Metadata-only

Positron annihilation at ionized acceptors and vacancies in indium phosphide after electron irradiation

Creators

  • 1. Lab. Positon, INSTN-SEPEM, CEN-Saclay, 91 Gif sur Yvette (France)
  • 2. Lab. of Physics, Helsinki Univ. of Technology (Finland)

Description

We report positron annihilation results on electron irradiated (2.0 MeV) InP. In all samples the average positron lifetime at 300 K increases after irradiation. Three defect lifetimes of 263 ps, 283 ps and 297 ps were found. In electron irradiated n-type InP(S:3.9 1018 cm-3), the 283 ps vacancy recovers between 150 K - 200 K, and after annealing at 300 K the 263 ps vacancy remains. In irradiated SI-InP(Fe) a defect lifetime of 297 ps was found after annealing at 300K. The defect lifetimes were interpreted as VP (263 ps), VIn (297 ps) and a mixing of the two (283 ps). (orig.)

Additional details

Additional titles

Augmented title (English)
InP:S

Publishing Information

Publisher
Trans Tech Publ.
Imprint Place
Aedermannsdorf (Switzerland)
ISBN
0-87849-671-8
Imprint Title
Proceedings of the 17th international conference on defects in semiconductors. Pt. 1
Imprint Pagination
673 p.
Journal Volume
143-147
Journal Issue
pt.1
Series
Materials science forum.
Journal Page Range
p. 347-352.
ISSN
0255-5476
CODEN
MSFOEP

Conference

Title
17. international conference on defects in semiconductors (ICDS-17).
Dates
18-23 Jul 1993.
Place
Gmunden (Austria).

INIS

Country of Publication
Switzerland
Country of Input or Organization
Switzerland
INIS RN
25068719
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ANNEALING; ANNIHILATION; CRYSTAL DEFECTS; ELECTRON-POSITRON INTERACTIONS; IMPURITIES; INDIUM PHOSPHIDES; INELASTIC SCATTERING; LIFETIME; MEV RANGE 01-10; N-TYPE CONDUCTORS; PHYSICAL RADIATION EFFECTS; POSITRONS; PROBES; SEMICONDUCTOR MATERIALS; SULFUR ADDITIONS; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0013-0065 K; TEMPERATURE RANGE 0065-0273 K; TEMPERATURE RANGE 0273-0400 K; THERMAL DIFFUSIVITY; VACANCIES
Descriptors DEC
ANTILEPTONS; ANTIMATTER; ANTIPARTICLES; CRYSTAL STRUCTURE; ELEMENTARY PARTICLES; ENERGY RANGE; FERMIONS; HEAT TREATMENTS; INDIUM COMPOUNDS; INTERACTIONS; LEPTON-LEPTON INTERACTIONS; LEPTONS; MATERIALS; MATTER; MEV RANGE; PARTICLE INTERACTIONS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PHYSICAL PROPERTIES; PNICTIDES; POINT DEFECTS; RADIATION EFFECTS; SCATTERING; TEMPERATURE RANGE; THERMODYNAMIC PROPERTIES