Published July 1990 | Version v1
Journal article

Improvements of stress controllability and radiation resistance by adding carbon to boron-nitride

  • 1. Fujitsu Limited, Advanced Technology Div., Nakahara-ku, Kawasaki 211 (Japan)
  • 2. Stanford Electronics Lab., Stanford Univ., Stanford, CA (USA)

Description

The addition of an atom having different bonding radii to a matrix film is an effective method for changing the stress of the film. In a plasma-enhanced CVD of BN, it is difficult to obtain tensile stress except for extremely boron-rich films. The controllability of tensile stress in BN film was improved by introducing a small amount of carbon into the BN matrix, using plasma-enhanced CVD between 400 degrees and 500 degrees C. The authors have obtained transparent films with high Young's modulus and tensile stress. They report that the radiation resistance of BNC deposited at 400 degrees C was improved five times better than that of BN deposited by low-pressure CVD at similar temperatures

Additional details

Publishing Information

Journal Title
Journal of the Electrochemical Society
Journal Volume
137
Journal Issue
7
Series
J. Electrochem. Soc.
Journal Page Range
2242-2245
ISSN
0013-4651
CODEN
JESOA