Published September 2008
| Version v1
Journal article
More effective potential for interaction between two excitons in semiconductors
- 1. Institute of Physics and Electronics, VAST, Hanoi (Viet Nam)
Description
In this work, in analogy with the case of the hydrogen molecule, we propose a Morse type effective potential to describe exciton-exciton interaction in semiconductors. Using this Morse-type effective potential, we obtained an analytical expression for the biexciton binding energy and exciton-exciton coupling constant. This simple model potential also useful and could be applied in other new problems of interacting exciton systems, such as interaction of excitons in low dimensional systems and nano structures, optical schemes for quantum computation with two identical spherical quantum dots, which are investigated in our previous works. (author)
Additional details
Publishing Information
- Journal Title
- Communications in Physics
- Journal Volume
- 18
- Journal Issue
- 3
- Series
- Published by the Vietnamese Academy of Science and Technology
- Journal Page Range
- p. 136-140
- ISSN
- 0868-3166
INIS
- Country of Publication
- Viet Nam
- Country of Input or Organization
- Viet Nam
- INIS RN
- 40073449
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- BINDING ENERGY; COUPLING CONSTANTS; EXCITONS; FERMI INTERACTIONS; HYDROGEN; MORSE POTENTIAL; QUANTUM COMPUTERS; QUANTUM DOTS; SEMICONDUCTOR MATERIALS; SPHERICAL CONFIGURATION
- Descriptors DEC
- BASIC INTERACTIONS; COMPUTERS; CONFIGURATION; ELEMENTS; ENERGY; INTERACTIONS; MATERIALS; NANOSTRUCTURES; NONMETALS; POTENTIALS; QUASI PARTICLES; WEAK INTERACTIONS
Optional Information
- Notes
- 3 figs., 18 refs.