Paramagnetic defect production in silicon after 112 MeV Ar ion irradiation

Electron Paramagnetic Resonance has been used to investigate the defects produced in silicon by irradiation with 112 MeV Ar ions below 50 K. Several kinds of defects, which include the neutral 4-vacancy (Si-P3 center), amorphous center and etc. are observed in the as-irradiated samples. The Si-P3 center is distributed in the regions where electronic stopping power dominates and is annealed out at about 200 degree C. Accompanied by the disappearance of the Si-P3 center, the complex vacancy clusters, such as Si-Pl center and Si-All center begin to grow. The recrystallization of the isolated amorphous region occurs at 350 degree C. The radius of the produced amorphous region for low fluence Ar ion irradiated sample is evaluated and it is distributed in the range from 16 to 20 A. The results are qualitatively discussed