Published April 15, 1992
| Version v1
Journal article
A study of high temperature oxidation of nickel after ion implantation
Creators
- 1. Dept. of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, Australian National Univ., Canberra (Australia)
- 2. Microelectronics and Materials Tech. Centre, Royal Melbourne Inst. of Tech. (Australia)
Description
Both polycrystalline and single-crystal nickel samples were implanted with 100 keV magnesium or krypton to doses of 1x1017 ions cm-2 and oxidized at 700degC in dry O2. The effects of implantation on the oxidation properties were studied using Rutherford backscattering spectrometry and channelling, secondary ion mass spectrometry and optical microscopy. Results showed different oxidation behaviour between implanted single-crystal and polycrystalline samples. Post-implantation annealing also changed the oxidation results. A major conclusion is that the chemical effect of implanted magnesium in single-crystal nickel is to retard short-term oxidation at 700degC after a post-implantation anneal. Possible mechanisms are discussed. (orig.)
Additional details
Publishing Information
- Journal Title
- Surface and Coatings Technology
- Journal Volume
- 51
- Journal Issue
- 1-3
- Series
- Surf. Coat. Technol.
- Journal Page Range
- 52-56
- ISSN
- 0257-8972
- CODEN
- SCTEE
Conference
- Title
- 7. international conference on surface modification of metals by ion beams.
- Dates
- 14-19 Jul 1991.
- Place
- Washington, DC (United States).
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- Switzerland
- INIS RN
- 23085745
- Subject category
- S36: MATERIALS SCIENCE; S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ANNEALING; BACKSCATTERING; ION CHANNELING; ION IMPLANTATION; KEV RANGE 10-100; KRYPTON IONS; MAGNESIUM IONS; MASS SPECTROSCOPY; MONOCRYSTALS; NICKEL; OPTICAL MICROSCOPY; OXIDATION; POLYCRYSTALS; RADIATION DOSES; RUTHERFORD SCATTERING; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0400-1000 K
- Descriptors DEC
- CHANNELING; CHARGED PARTICLES; CHEMICAL REACTIONS; CRYSTALS; ELASTIC SCATTERING; ELEMENTS; ENERGY RANGE; HEAT TREATMENTS; IONS; KEV RANGE; METALS; MICROSCOPY; SCATTERING; SPECTROSCOPY; TEMPERATURE RANGE; TRANSITION ELEMENTS