Some peculiarities of defect formation, spatial distribution and localization of As atoms at implantation under channeling conditions at elevated temperatures

The back scattering method was used to investigate into spatial distribution of impurity, defects and location of interstitial atoms in the Si lattice following implantation of 30 keV As+ ions with a 3x1015 cm-2 dose into silicon under channeling conditions. It is shown that the distribUtion of As atoms implanted with channeling at 300 deg C, is characterized by two maximums specified by superposition of distributions of ions dechanneled or nonchanneled from the very beginning. A channeled beam of As+ ions creates less defects as compared to a nonchanneled beam at an elevated irradiation temperature. The share of a substituting component of As atoms is found to depend on the depth. The effect of ruby laser radiation pulses with 1 J/cm2 energy and 40 ns duration results in removal of radiation defects and depth-dependent leveling of the degree of Si lattice points substitUtion by the As atoms