Effect of pressure and doping on lattice structure of zinc oxide

The semiconductor ZnO belongs to the IIb-VI binary compound. It has a high exciton binding energy of 60 meV. The bonding in these materials is covalent with some ionic character. Induced changes on the physical properties of Mn doped ZnO samples due to different dopant concentrations and pressure were evaluated. The results obtained showed higher solubility limit for Mn doped ZnO due to pressure. The trend of XRD results for higher Mn concentration (9 at%) as pressure increases, was towards doping improvement. The XRD, SEM and UV–vis study of the samples also revealed that there were variations in the lattice parameters, nanoparticle size and bandgap energy of the doped and pressurized doped samples. Further, the directions of variation of bandgap energy values and calculated particle size, as well as SEM values of the doped samples due to pressure variation were found to be the same i.e. all of them together either increase or decrease as pressure varies. However, these variations were found to be opposite to that of lattice constants (all a and most c values) variation for both Mn dopant concentrations (3 at% and 9 at%). These physical variations of unpressurized doped samples can be attributed to the change in the polar bonding of the elemental constitutions in the lattice. While for the pressurized doped samples, the variations attributed to repulsion of lone pairs as well as change in the electronegativity of the system.