Published February 1992
| Version v1
Journal article
Use of the SUNY microbeam to investigate effects of mechanical treatment on metal/metal interdiffusion kinetics
Creators
- 1. Dept. of Physics, SUNY Albany, NY (United States)
- 2. IBM Research Lab., Yorktown Heights, NY (United States)
Description
The SUNY Albany rastered microbeam has been used to investigate the effects of mechanical pretreatment on metal/metal interdiffusion kinetics. Gating on different regions of a RBS spectrum can be used to create ''diffusion maps'' that reveal the lateral dependence of metal/metal interdiffusion. Al/Hf/Al multilayer thin films were prepared and subjected to a mechanical force applied at one point. Interdiffusion kinetics of Al and Hf was then studied by annealing these samples and using the microbeam to measure RBS spectra as a function of distance from the point of mechanical treatment. It is found that the mechanical pretreatment can have a large effect on the Al/Hf/Al interdiffusion. (orig.)
Additional details
Publishing Information
- Journal Title
- Nuclear Instruments and Methods in Physics Research. Section B
- Journal Volume
- 64
- Journal Issue
- 1-4
- Series
- Nucl. Instrum. Methods Phys. Res., Sect. B.
- Journal Page Range
- 125-129
- ISSN
- 0168-583X
- CODEN
- NIMBE
Conference
- Title
- 10. international conference on ion beam analysis (IBA-10).
- Dates
- 1-5 Jul 1991.
- Place
- Eindhoven (Netherlands).
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- Netherlands
- INIS RN
- 23056510
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference, Numerical Data
- Descriptors DEI
- ALUMINIUM; ANNEALING; BACKSCATTERING; BEAM SCANNERS; DIFFUSION; ELECTRON EMISSION; EXPERIMENTAL DATA; FILMS; HAFNIUM; INTERFACES; KINETICS; MICROSTRUCTURE; MONOCHROMATORS; NSLS; PIXE ANALYSIS; RESEARCH PROGRAMS; RUTHERFORD SCATTERING; SCANNING ELECTRON MICROSCOPY; SECONDARY EMISSION; TEMPERATURE RANGE 0400-1000 K; THICKNESS; THIN FILMS
- Descriptors DEC
- BEAM MONITORS; CHEMICAL ANALYSIS; CRYSTAL STRUCTURE; DATA; DIMENSIONS; ELASTIC SCATTERING; ELECTRON MICROSCOPY; ELEMENTS; EMISSION; HEAT TREATMENTS; INFORMATION; MEASURING INSTRUMENTS; METALS; MICROSCOPY; MONITORS; NONDESTRUCTIVE ANALYSIS; NUMERICAL DATA; RADIATION SOURCES; SCATTERING; SYNCHROTRON RADIATION SOURCES; TEMPERATURE RANGE; TRANSITION ELEMENTS; X-RAY EMISSION ANALYSIS