Published November 1, 2010 | Version v1
Journal article

Thermal healing of the sub-surface damage layer in sapphire

  • 1. Nuclear Research Center - Negev, P.O. Box 9001, Beer Sheva 84100 (Israel)
  • 2. Department of Materials Engineering and the Ilse Katz Center for Nanoscience and Nanotechnology, Ben-Gurion University of the Negev, Beer Sheva 84105 (Israel)
  • 3. Rotem Industries Ltd, P.O. Box 9046, Beer Sheva 84190 (Israel)
  • 4. Department of Chemical Engineering, Ben-Gurion University of the Negev, Beer Sheva 84105 (Israel)

Description

The sub-surface damage layer formed by mechanical polishing of sapphire is known to reduce the mechanical strength of the processed sapphire and to degrade the performance of sapphire based components. Thermal annealing is one of the methods to eliminate the sub-surface damage layer. This study focuses on the mechanism of thermal healing by studying its effect on surface topography of a- and c-plane surfaces, on the residual stresses in surface layers and on the thickness of the sub-surface damage layer. An atomically flat surface was developed on thermally annealed c-plane surfaces while a faceted roof-top topography was formed on a-plane surfaces. The annealing resulted in an improved crystallographic perfection close to the sample surface as was indicated by a noticeable decrease in X-ray rocking curve peak width. Etching experiments and surface roughness measurements using white light interferometry with sub-nanometer resolution on specimens annealed to different extents indicate that the sub-surface damage layer of the optically polished sapphire is less than 3 μm thick and it is totally healed after thermal treatment at 1450 deg. C for 72 h.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.matchemphys.2010.06.041

Additional details

Identifiers

DOI
10.1016/j.matchemphys.2010.06.041;
PII
S0254-0584(10)00500-6;

Publishing Information

Journal Title
Materials Chemistry and Physics
Journal Volume
124
Journal Issue
1
Journal Page Range
p. 323-329
ISSN
0254-0584
CODEN
MCHPDR

Optional Information

Copyright
Copyright (c) 2010 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.