Published 1990 | Version v1
Miscellaneous

Epitaxial growth of semi-insulator InP=Fe by MOCVD

  • 1. TELEBRAS, Campinas, SP (Brazil). Centro de Pesquisas
  • 2. Universidade do Estado, Rio de Janeiro, RJ (Brazil). Inst. de Fisica

Description

Published in summary form only

Availability note (English)

Available from the Library of Comissao Nacional de Energia Nuclear, RJ, Brazil.

Additional details

Additional titles

Original title (Portuguese)
Crescimento epitaxial de InP=Fe semi-isolante por MOCVD

Publishing Information

Imprint Title
Proceedings of the 13. National Meeting on Condensed Matter Physics
Imprint Pagination
284 p.
Journal Page Range
p. 228.

Conference

Title
13. National Meeting on Condensed Matter Physics.
Dates
8-12 May 1990.
Place
Caxambu, MG (Brazil).

INIS

Country of Publication
Brazil
Country of Input or Organization
Brazil
INIS RN
22039743
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference, No Abstract, Non-conventional Literature
Descriptors DEI
CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; ELECTRIC CONDUCTIVITY; EPITAXY; INDIUM COMPOUNDS; IRON
Descriptors DEC
CHEMICAL COATING; DEPOSITION; ELECTRICAL PROPERTIES; ELEMENTS; METALS; PHYSICAL PROPERTIES; SURFACE COATING; TRANSITION ELEMENTS