Published 1990
| Version v1
Miscellaneous
Epitaxial growth of semi-insulator InP=Fe by MOCVD
- 1. TELEBRAS, Campinas, SP (Brazil). Centro de Pesquisas
- 2. Universidade do Estado, Rio de Janeiro, RJ (Brazil). Inst. de Fisica
Description
Published in summary form only
Availability note (English)
Available from the Library of Comissao Nacional de Energia Nuclear, RJ, Brazil.Additional details
Additional titles
- Original title (Portuguese)
- Crescimento epitaxial de InP=Fe semi-isolante por MOCVD
Publishing Information
- Imprint Title
- Proceedings of the 13. National Meeting on Condensed Matter Physics
- Imprint Pagination
- 284 p.
- Journal Page Range
- p. 228.
Conference
- Title
- 13. National Meeting on Condensed Matter Physics.
- Dates
- 8-12 May 1990.
- Place
- Caxambu, MG (Brazil).
INIS
- Country of Publication
- Brazil
- Country of Input or Organization
- Brazil
- INIS RN
- 22039743
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference, No Abstract, Non-conventional Literature
- Descriptors DEI
- CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; ELECTRIC CONDUCTIVITY; EPITAXY; INDIUM COMPOUNDS; IRON
- Descriptors DEC
- CHEMICAL COATING; DEPOSITION; ELECTRICAL PROPERTIES; ELEMENTS; METALS; PHYSICAL PROPERTIES; SURFACE COATING; TRANSITION ELEMENTS