Published 2010 | Version v1
Miscellaneous

Enhancement of qualities of epitaxial SOS (silicon on sapphire) structures by the treatment of wight light pulses

  • 1. State university of Academician Tsereteli, Kutaisi (Georgia)

Description

no abstract available

Part of:
Materials of 4 electronic technic and modern informational technologies (METIT-4). Abstracts

Additional details

Additional titles

Original title (Russian)
Улучшение качеств эпитаксиальных KNS структур путем обработки импульсами белого света

Publishing Information

Imprint Place
Kremenchuk (Ukraine)
ISBN
978-966-8931-70-3
Imprint Title
4. International Scientific-practical conference on materials of electronic techniques and modern informational technologies (METIT-4). Abstracts
Imprint Pagination
248 p.
Journal Page Range
p. 25-27
Report number
INIS-UA--166

Conference

Title
4. International scientific-practical conference
Original Conference Title
4. Mezhdunarodna naukovo-praktichna konferentsyiya
Dates
19-21 May 2010
Place
Kremenchuk (Ukraine)

INIS

Country of Publication
Ukraine
Country of Input or Organization
Ukraine
INIS RN
42100226
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference, No Abstract, Non-conventional Literature
Descriptors DEI
ANNEALING; CHEMICAL BONDS; CRYSTAL DEFECTS; MICROHARDNESS; N-TYPE CONDUCTORS; PHOTON BEAMS; PULSES; SAPPHIRE; SILICON; SUBSTRATES; VISIBLE RADIATION
Descriptors DEC
BEAMS; CORUNDUM; CRYSTAL STRUCTURE; ELECTROMAGNETIC RADIATION; ELEMENTS; HARDNESS; HEAT TREATMENTS; MATERIALS; MECHANICAL PROPERTIES; MINERALS; OXIDE MINERALS; RADIATIONS; SEMICONDUCTOR MATERIALS; SEMIMETALS

Optional Information