Published 1996
| Version v1
Report
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On the charge multiplication mechanism in silicon radiation detectors
Description
The analysis of the experimental data obtained for different silicon detector types irradiated by heavy charged particles in wide range of its masses and energies was carried out. It is shown that the experimental results are in good agreement with model based on the charge accumulation close to entrance detector electrode in course of the charge collection process. The accumulation of the dense cloud of current carriers leads to temporarily creation of high electric field, which can cause an impact ionization of charge carriers. 13 refs., 2 figs
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Additional details
Publishing Information
- Imprint Pagination
- 6 p.
- Report number
- JINR-E--13-96-327
INIS
- Country of Publication
- Joint Institute for Nuclear Research (JINR)
- Country of Input or Organization
- Joint Institute for Nuclear Research (JINR)
- INIS RN
- 28034818
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Descriptors DEI
- ARGON 40 BEAMS; CHARGE CARRIERS; CHARGED PARTICLES; DATA ANALYSIS; ELECTRIC FIELDS; MEV RANGE 100-1000; MULTIPLICATION FACTORS; SI SEMICONDUCTOR DETECTORS
- Descriptors DEC
- BEAMS; ENERGY RANGE; ION BEAMS; MEASURING INSTRUMENTS; MEV RANGE; RADIATION DETECTORS; SEMICONDUCTOR DETECTORS
Optional Information
- Notes
- Submitted to Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment.