Published October 15, 2004 | Version v1
Journal article

Effects of hydrogen peroxide and alumina on surface characteristics of copper chemical-mechanical polishing in citric acid slurries

Description

The roles of H2O2 and alumina on the changes of metal removal rate, surface passivation and surface morphology in citric acid (CA) base slurry in simulated Cu chemical-mechanical polishing (CMP) was investigated. X-ray photoelectron spectroscopy (XPS) analysis indicated that H2O2 assisted oxide formation while citric acid promoted anodic dissolution of copper in various slurries that contained 1 wt.% Al2O3. Atomic force microscopy (AFM) revealed that Al2O3 abrasive particles modified the surface morphology by inducing surface deformation. The results of open circuit potential (OCP) and removal rate measurements clearly demonstrated that there existed a synergistic effect due to the chelating and oxidizing agents in Cu CMP

Additional details

Identifiers

DOI
10.1016/j.matchemphys.2004.06.007;
PII
S0254058404002780;

Publishing Information

Journal Title
Materials Chemistry and Physics
Journal Volume
87
Journal Issue
2-3
Journal Page Range
p. 387-393
ISSN
0254-0584
CODEN
MCHPDR

Optional Information

Copyright
Copyright (c) 2004 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.