Published January 2010 | Version v1
Journal article

A red europium (III) ternary complex for InGaN-based light-emitting diode

  • 1. School of Chemistry and Chemical Engineering, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-Sen University, Guangzhou 510275 (China)
  • 2. School of Chemistry and Biotechnology, Yunnan Nationalities University, Kunming, Yunnan 650031 (China)
  • 3. Research branch of R and D Center of Hongta Tobacco (GROUP) CO. Ltd., Yunnan 653100 (China)

Description

One kind of europium (III) ternary complex was synthesized, and its photoluminescence properties were investigated. This complex exhibits broad excitation band in near-UV range, and strong red emission which is due to the 5D0-7Fj transitions of Eu3+ ions. The luminescence quantum yield for the Eu3+ complex is 0.17. Thermogravimetric analysis confirms a high thermal stability of the complex with a decomposition temperature of 344 deg. C. All the characteristics indicate that the Eu3+ complex is a highly efficient red phosphor suitable to be excited by near UV light. An intense red light-emitting diode was fabricated by combining the europium (III) ternary complex with a ∼395 nm-emitting InGaN chip.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.jlumin.2009.07.011

Additional details

Identifiers

DOI
10.1016/j.jlumin.2009.07.011;
PII
S0022-2313(09)00374-3;

Publishing Information

Journal Title
Journal of Luminescence
Journal Volume
130
Journal Issue
1
Journal Page Range
p. 35-37
ISSN
0022-2313
CODEN
JLUMA8

Optional Information

Copyright
Copyright (c) 2009 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.