Investigation of anisotropic photoresponse in Re_0.2Sn_0.8Se₂ ternary alloy at low temperature conditions

Photodetectors which can operate at low temperature with multiple configurations are building blocks for the future technology in the field of Photonics. In this work, we have investigated the low temperature anisotropic photoresponse of Re_0.2Sn_0.8Se₂ ternary alloy grown by direct vapor transport (DVT) technique. The time-dependent photoresponse of the Re_0.2Sn_0.8Se₂ ternary alloy is recorded at different temperatures ranging from 300 to 60 K. At 300 K, Re_0.2Sn_0.8Se₂ ternary alloy shows excellent photoresponse in both parallel and perpendicular configurations. We have observed that the Re_0.2Sn_0.8Se₂ ternary alloy retains its outstanding photoresponse ability even at a low temperature of 60 K, in both the parallel and perpendicular configurations. Moreover, the critical parameters related to photodetection properties such as photoresponsivity (R_λ), spectral detectivity (D^*), and rise time are evaluated. Our work demonstrates the potential of Re-doped SnSe₂ ternary alloys for optoelectronic devices function at low temperatures.