Versatile computer programs for analysis of random and channeling backscattering spectra

Two types of computer programs have been developed to simulate random and channeling backscattering spectra with high speed. One is applicable to analysis of multielemental and multilayered structures. Depth profiles of interdiffusion and of impurities distributed inhomogeneously can be analyzed simultaneously with this program. Another allows the simulation of channeling spectrum from a perfect or partially damaged single crystal whose top surface consists of an amorphous layer with an arbitrary thickness. These simulation programs are applied to determine the thicknesses of the ten-layered structure of Ag/Al/Ag/.../Al, the mixing rates for the Al/Sb system irradiated with Xe ions, and the damage profile of GaP induced by Ar+ irradiation