Published January 1989
| Version v1
Journal article
SRPES analysis of Ga-insulator interfaces for GaAs lateral epitaxial growth
- 1. Nippon Telegraph and Telephone Corp., Musashino, Tokyo (Japan). Applied Electronics Labs.
Description
The GaAs lateral-epitaxial growth mechanism on insulators is studied using synchrotron radiation photoemission spectroscopy on Ga-insulator interfaces. Interfacial reaction is compared with surface migration of deposited atoms and clusters. Surface-sensitive PES results indicate that among SiO2, Sm2O3, Al2O3, TiO2, MgO and Ta2O5, only TiO2 is heavily oxidized, and that interfacial TiO2 is strongly reduced to Ti metal. The growth model is also discussed. In comparison with the MOCVD GaAs lateral growth rate on these insulators, a close correlation of the surface migration rate of GaAs precipitates with the interfacial reactivity is obtained. (author)
Additional details
Publishing Information
- Journal Title
- Denki Tsushin Kenkyusho Kenkyu Jitsuyoka Hokoku
- Journal Volume
- 38
- Journal Issue
- 1
- Series
- Denki Tsushin Kenkyusho Kenkyu Jitsuyoka Hokoku.
- Journal Page Range
- 7-14
- ISSN
- 0415-3200
- CODEN
- DTKKA
INIS
- Country of Publication
- Japan
- Country of Input or Organization
- Japan
- INIS RN
- 20047129
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- BINDING ENERGY; DIFFUSION; ELECTRICAL INSULATORS; EPITAXY; GALLIUM; INTERFACES; PHOTOELECTRON SPECTROSCOPY; PHOTOEMISSION; SYNCHROTRON RADIATION; TITANIUM OXIDES
- Descriptors DEC
- BREMSSTRAHLUNG; CHALCOGENIDES; ELECTRICAL EQUIPMENT; ELECTROMAGNETIC RADIATION; ELECTRON SPECTROSCOPY; ELEMENTS; EMISSION; ENERGY; EQUIPMENT; METALS; OXIDES; OXYGEN COMPOUNDS; RADIATIONS; SECONDARY EMISSION; SPECTROSCOPY; TITANIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS