Published October 1986
| Version v1
Journal article
Hall mobility in Hg3In2Te6
Description
Hall mobility temperature dependence is investigated. Results of experimental study of scattering in Hg3In2Te6 show that the main scattering mechanism is that by ionized atoms and acoustic phonons. Concentration of ionized atoms being approximately 1018 cm-3 is estimated. Results of investigations confirmed correctness of the model based on self-compensation with Fermi level stabilization in the middle of the forbidden gap
Additional details
Additional titles
- Original title (Russian)
- Холловская подвижност' в Хг
Publishing Information
- Journal Title
- Izv. Vyssh. Uchebn. Zaved., Fiz.
- Journal Volume
- 29
- Journal Issue
- 10
- Series
- Izv. Vyssh. Uchebn. Zaved., Fiz.
- Journal Page Range
- 121-122
- ISSN
- 0021-3411
- CODEN
- IVUFA
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- USSR
- INIS RN
- 18070901
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ELECTRIC CONDUCTIVITY; FERMI LEVEL; HALL EFFECT; HIGH TEMPERATURE; INDIUM TELLURIDES; MEDIUM TEMPERATURE; MERCURY TELLURIDES; MONOCRYSTALS; N-TYPE CONDUCTORS; TEMPERATURE DEPENDENCE
- Descriptors DEC
- CHALCOGENIDES; CRYSTALS; ELECTRICAL PROPERTIES; ENERGY LEVELS; INDIUM COMPOUNDS; MATERIALS; MERCURY COMPOUNDS; PHYSICAL PROPERTIES; SEMICONDUCTOR MATERIALS; TELLURIDES; TELLURIUM COMPOUNDS
Optional Information
- Notes
- For English translation see the journal Soviet Physics Journal (USA).