Published February 2013
| Version v1
Journal article
A > 4 MGy radiation tolerant 8 THzOhm transimpedance amplifier with 50 dB dynamic range
Creators
- 1. Katholieke Universiteit Leuven dept. ESAT-MICAS, Kasteelpark Arenberg 10 B-3001 Heverlee (Belgium)
Description
A 130 nm Transimpedance Amplifier has been developed with a 255 MHz bandwidth, 90 dBΩ transimpedance gain and a dynamic input range of 1:325 or 50 dB for a photo-diode capacitance of 0.75 pF. The equivalent integrated input noise is 160 nA - 25°C. The gain of the voltage amplifier, used in the transimpedance amplifier (TIA), degrades less than 3% over a temperature range from -40 °C up to 125 °C. The TIA and attenuator exhibit a radiation tolerance larger than 4 MGy, as evidenced by radiation assessment.
Availability note (English)
Available from http://dx.doi.org/10.1088/1748-0221/8/02/C02052Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Instrumentation
- Journal Volume
- 8
- Journal Issue
- 02
- Journal Page Range
- p. C02052
- ISSN
- 1748-0221
Conference
- Title
- Topical Workshop on Electronics for Particle Physics 2012
- Acronym
- TWEPP12
- Dates
- 17-21 Sep 2012
- Place
- Oxford (United Kingdom)
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 44068272
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- AMPLIFIERS; CAPACITANCE; GAIN; PHOTODIODES
- Descriptors DEC
- AMPLIFICATION; ELECTRICAL PROPERTIES; ELECTRONIC EQUIPMENT; EQUIPMENT; PHYSICAL PROPERTIES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES