2D position sensitive microstrip sensors with charge division along the strip: Studies on the position measurement error
Creators
- 1. Centro Nacional de Microelectrónica de Barcelona IMB-CNM (CSIC), Campus Univ. Autónoma de Barcelona, 08193 Bellaterra (Spain)
- 2. Instituto de Física de Cantabria IFCA (CSIC-UC), Avd. de los Castros s/n, 39005 Santander (Spain)
Description
Position sensitivity in semiconductor detectors of ionizing radiation is usually achieved by the segmentation of the sensing diode junction in many small sensing elements read out separately as in the case of conventional microstrips and pixel detectors. Alternatively, position sensitivity can be obtained by splitting the ionization signal collected by one single electrode amongst more than one readout channel with the ratio of the collected charges depending on the position where the signal was primary generated. Following this later approach, we implemented the charge division method in a conventional microstrip detector to obtain position sensitivity along the strip. We manufactured a proof-of-concept demonstrator where the conventional aluminum electrodes were replaced by slightly resistive electrodes made of strongly doped poly-crystalline silicon and being readout at both strip ends. Here, we partially summarize the laser characterization of this first proof-of-concept demonstrator with special emphasis on the study on how the different noise sources are affecting the device position error along the strip
Availability note (English)
Available from http://dx.doi.org/10.1016/j.nima.2013.06.018Additional details
Identifiers
- DOI
- 10.1016/j.nima.2013.06.018;
- PII
- S0168-9002(13)00838-3;
Publishing Information
- Journal Title
- Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment
- Journal Volume
- 732
- Journal Page Range
- p. 186-189
- ISSN
- 0168-9002
- CODEN
- NIMAER
Conference
- Title
- 13. Vienna conference on instrumentation
- Dates
- 11-15 Feb 2013
- Place
- Vienna (Austria)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 45051626
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ALUMINIUM; CONNECTORS; DOPED MATERIALS; ELECTRODES; ERRORS; JUNCTION DETECTORS; NOISE; POSITION SENSITIVE DETECTORS; READOUT SYSTEMS; SEMICONDUCTOR JUNCTIONS; SENSITIVITY; SENSORS; SI MICROSTRIP DETECTORS; SIGNALS
- Descriptors DEC
- CONDUCTOR DEVICES; ELECTRICAL EQUIPMENT; ELEMENTS; EQUIPMENT; MATERIALS; MEASURING INSTRUMENTS; METALS; RADIATION DETECTORS; SEMICONDUCTOR DETECTORS; SI SEMICONDUCTOR DETECTORS
Optional Information
- Copyright
- Copyright (c) 2013 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.