High-sensitivity resistivity technique for studies of defect behavior
Creators
- 1. University of Illinois, Materials Research Laboratory and Department of Metallurgy and Mining Engineering, Urbana, Illinois 61801
Description
An experimental method for measurement of the contribution to the electrical resistivity due to solutes or defects is described. This technique, which is based on an ac Kelvin Double Bridge may be used at elevated temperatures and does not require the use of liquid helium. The resistivity caused by solutes or defects, rho/sub x/s, can be determined at temperatures near 300 K with an accuracy of better than δrho/sub x/s/rho/sub x/sroughly-equal10-3; with the major source of error being the accuracy to which the material resistivity is known. Relative changes in the solute (defect) resistivity can be measured with a precision of 5 x 10-10 Ω cm. A specimen design and mounting procedure, which takes advantage of the high bridge sensitivity, is described
Additional details
Publishing Information
- Journal Title
- Rev. Sci. Instrum.
- Journal Volume
- 54
- Journal Issue
- 3
- Series
- Rev. Sci. Instrum.
- Journal Page Range
- 366-368
- ISSN
- 0034-6748
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 14768598
- Subject category
- S42: ENGINEERING;
- Resource subtype / Literary indicator
- Numerical Data
- Descriptors DEI
- ACCURACY; ALTERNATING CURRENT; CRYSTAL DEFECTS; ELECTRIC BRIDGES; ELECTRIC CONDUCTIVITY; ERRORS; EXPERIMENTAL DATA; MEASURING METHODS; MEDIUM TEMPERATURE; SAMPLE HOLDERS; SENSITIVITY; SOLUTIONS; SPECIFICATIONS
- Descriptors DEC
- CRYSTAL STRUCTURE; CURRENTS; DATA; DISPERSIONS; ELECTRIC CURRENTS; ELECTRICAL EQUIPMENT; ELECTRICAL PROPERTIES; EQUIPMENT; HOMOGENEOUS MIXTURES; INFORMATION; MIXTURES; NUMERICAL DATA; PHYSICAL PROPERTIES