Published April 1995
| Version v1
Journal article
Polarization dependent photoconductivity in uniaxially deformed narrow-gap semiconductors
- 1. AN Ukrainskoj SSR, Kiev (Ukraine). Nauchnyj Sovet po Probleme Fizika Poluprovodnikov
Description
Polarization-dependent variations of photoconductivity spectral characteristics induced by single-axis elastic deformation in InSb and CdxHg1-xTe narrow-gap semiconductors are detected and interpreted. The mentioned variations result from difference in selection rules for optical transitions from the states of the valent zone splitted by deformation into the conductivity zone. 8 refs.; 4 figs
Additional details
Additional titles
- Original title (Russian)
- Поляризационно-зависимая фотопроводимость в одноосно-деформированных узкощелевых полупроводниках
Publishing Information
- Journal Title
- Fizika i Tekhnika Poluprovodnikov
- Journal Volume
- 29
- Journal Issue
- 4
- Journal Page Range
- p. 708-713.
- ISSN
- 0015-3222
- CODEN
- FTPPA4
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- Russian Federation
- INIS RN
- 26075942
- Subject category
- S36: MATERIALS SCIENCE; S36: MATERIALS SCIENCE;
- Descriptors DEI
- CADMIUM TELLURIDES; DEFORMATION; ENERGY GAP; ENERGY-LEVEL TRANSITIONS; INDIUM ANTIMONIDES; INTERMETALLIC COMPOUNDS; MERCURY TELLURIDES; ORIENTATION; PHOTOCONDUCTIVITY; POLARIZATION
- Descriptors DEC
- ALLOYS; ANTIMONIDES; ANTIMONY COMPOUNDS; CADMIUM COMPOUNDS; CHALCOGENIDES; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; INDIUM COMPOUNDS; MERCURY COMPOUNDS; PHYSICAL PROPERTIES; PNICTIDES; TELLURIDES; TELLURIUM COMPOUNDS