Published July 2022
| Version v1
Journal article
Compositional analysis of hafnium nitride thin films by backscattering spectrometry with a proton beam
Creators
- 1. Kyoto University, Department of Electronic Science and Engineering, Kyoto (Japan)
Description
We measured the energy spectrum of protons backscattered from hafnium nitride thin films by rf magnetron sputtering and evaluated the concentrations of the constituents in the film with an aid of numerical simulation. The spectrum generated by the simulation with such assumption that film consisted only of hafnium and nitrogen did not reproduce the measured spectrum well. It was suggested that the film contains of other light elements such as carbon and oxygen. (author)
Additional details
Publishing Information
- Journal Title
- Annual Report of Quantum Science and Engineering Center
- Journal Volume
- 24
- Journal Page Range
- p. 49-50
- ISSN
- 1345-0700
INIS
- Country of Publication
- Japan
- Country of Input or Organization
- Japan
- INIS RN
- 54111662
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- BACKSCATTERING; COMPUTERIZED SIMULATION; DEPOSITION; HAFNIUM NITRIDES; MAGNETRONS; PROTON BEAMS; RF SYSTEMS; RUTHERFORD SCATTERING; SPUTTERING; TANDEM ELECTROSTATIC ACCELERATORS; THIN FILMS
- Descriptors DEC
- ACCELERATORS; BEAMS; ELASTIC SCATTERING; ELECTRON TUBES; ELECTRONIC EQUIPMENT; ELECTROSTATIC ACCELERATORS; EQUIPMENT; FILMS; HAFNIUM COMPOUNDS; MICROWAVE EQUIPMENT; MICROWAVE TUBES; NITRIDES; NITROGEN COMPOUNDS; NUCLEON BEAMS; PARTICLE BEAMS; PNICTIDES; REFRACTORY METAL COMPOUNDS; SCATTERING; SIMULATION; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Notes
- 2 refs., 1 fig.