Published May 2007
| Version v1
Journal article
Chaotic behavior in the magneto-resistance of quantum dot and quantum point contact
Creators
- 1. Chiba Univ., Dept. of Electronics and Mechanical Engineering, Chiba (Japan)
- 2. Dept. of Electrical Engineering, Univ. at Buffalo, SUNY, Buffalo, NY (United States)
- 3. Dept. of Electrical Engineering, Arizona State Univ., Tempe, AZ (United States)
Description
We have investigated quantum structures, such as narrow wires, single or coupled quantum dots (QDs), and quantum point contact (QPC), in order to clarify the origin of the chaotic and fractal behavior in their transport properties. Chaotic behavior in the electrical transport in QD and QPC has been studied in the low temperature magneto-resistance (MR), and by use of scanning gate microscopy (SGM). The quantum structures are fabricated using hetero-junction semiconductors. The low temperature MR has been measured using a 3He cryostat or dilution refrigerator with magnetic fields up to 8 T. We discuss the relation between the narrow constrictions in these structures and chaotic scatterings observed in the MR and SGM. (author)
Additional details
Publishing Information
- Journal Title
- Progress of Theoretical Physics, Supplement
- Journal Issue
- no.166
- Journal Page Range
- p. 127-135
- ISSN
- 0375-9687
Conference
- Title
- International conference on quantum mechanics and chaos
- Acronym
- QMC 2006
- Dates
- 19-21 Sep 2006
- Place
- Osaka (Japan)
INIS
- Country of Publication
- Japan
- Country of Input or Organization
- Japan
- INIS RN
- 38093768
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CHAOS THEORY; ELECTRIC CONTACTS; FRACTALS; GAUSSIAN PROCESSES; HETEROJUNCTIONS; INTERFERENCE; MAGNETIC FIELDS; MAGNETORESISTANCE; MICROSCOPY; QUALITY FACTOR; QUANTUM DOTS; QUANTUM MECHANICS; QUANTUM WIRES; SHUBNIKOV-DE HAAS EFFECT; TEMPERATURE RANGE 0000-0013 K
- Descriptors DEC
- DIMENSIONLESS NUMBERS; ELECTRIC CONDUCTIVITY; ELECTRICAL EQUIPMENT; ELECTRICAL PROPERTIES; EQUIPMENT; MATHEMATICS; MECHANICS; NANOSTRUCTURES; PHYSICAL PROPERTIES; SEMICONDUCTOR JUNCTIONS; TEMPERATURE RANGE
Optional Information
- Notes
- 20 refs., 7 figs.