Published July 11, 2007 | Version v1
Journal article

Vertically aligned wurtzite CdTe nanowires derived from a catalytically driven growth mode

  • 1. Department of Engineering Physics, McMaster University, Hamilton, ON, L8S 4L7 (Canada)
  • 2. Brockhouse Institute for Materials Research, McMaster University, Hamilton, ON, L8S 4M1 (Canada)
  • 3. Instituto de Microelectronica de Madrid CNM-CSIC, Madrid, 28760 (Spain)

Description

Substrate-based catalytic growth modes have been widely used to fabricate vertically aligned nanowires for most technologically relevant semiconducting systems, with CdTe being a notable exception. The catalysts that promote a one-dimensional nanoscale growth mode in other systems seem to fail, creating the need for an alternative approach. Here, we demonstrate how nanowire structures can be derived from a newly developed catalytically driven process. The vertically aligned nanowires produced are highly faceted and share an epitaxial relationship with the underlying substrate. The nanowire structures could also be described as nanorods; they show a high degree of size uniformity over large areas with heights of 300 nm imposed by growth dynamics. Two-dimensional x-ray diffraction techniques indicate that the CdTe exists in the wurtzite crystal structure instead of the zinc blende structure normally associated with the bulk material. The work presented here adds these substrate-based wurtzite CdTe nanowires to the growing list of potential building blocks for nano-based devices

Additional details

Identifiers

DOI
10.1088/0957-4484/18/27/275301;
PII
S0957-4484(07)48060-6;

Publishing Information

Journal Title
Nanotechnology (Print)
Journal Volume
18
Journal Issue
27
Journal Page Range
p. 275301
ISSN
0957-4484