Published 2007
| Version v1
Book
Electron structure of nano-size ion-implanted layers in silicon
Creators
- 1. Tashkentskij Gosudarstvennyj Tekhnicheskij Univ., Tashkent (Uzbekistan)
Description
In the work influence of large dose ion implantation on silicon surface electron-zone structure was studied. Models of Si(111) zone diagram, of p-type implanted by B+ ions with E0=0.5 keV with various doses D, cm-2: 0, 1014, 1015, 6·1016 and after thermal annealing at T=1000 K designed without taking into consideration zones curve were stated
Additional details
Additional titles
- Original title (Russian)
- Электронная структура наноразмерных ионно-имплантированных слоев в кремнии
Publishing Information
- Publisher
- Inst. Yadernoj Fiziki NYaTs RK
- Imprint Place
- Almaty (Kazakhstan)
- ISBN
- 9965-675-37-6
- Imprint Title
- Abstracts of 6. International conference 'Nuclear and Radiation Physics'
- Imprint Pagination
- 726 p.
- Journal Page Range
- p. 436-438
Conference
- Title
- 6. International conference on Nuclear and Radiation Physics
- Original Conference Title
- 6. Mezhdunarodnaya konferentsiya 'Yadernaya i Radiatsionnaya Fizika'
- Dates
- 4-7 Jun 2007
- Place
- Almaty (Kazakhstan)
INIS
- Country of Publication
- Kazakhstan
- Country of Input or Organization
- Kazakhstan
- INIS RN
- 39041326
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ANNEALING; BORON IONS; ION IMPLANTATION; P-TYPE CONDUCTORS; RADIATION DOSES; SILICON; SURFACES; TEMPERATURE RANGE 1000-4000 K
- Descriptors DEC
- CHARGED PARTICLES; DOSES; ELEMENTS; HEAT TREATMENTS; IONS; MATERIALS; SEMICONDUCTOR MATERIALS; SEMIMETALS; TEMPERATURE RANGE
Optional Information
- Notes
- 2 refs., 1 fig.