Published January 20, 1998 | Version v1
Journal article

Elucidation of activation layer model by means of measurements of photoelectron energy distribution curves

  • 1. Max-Plank-Institut fuer Kernphysik and Physikalisches Institut der Universitaet, 69029 Heidelberg (Germany)
  • 2. Institute of Semiconductor Physics, 630090 Novosibirsk (Russian Federation)
  • 3. Novosibirsk State University, 630090 Novosibirsk (Russian Federation)

Description

The comparative study of (Cs,NF3) and (Cs,O2) activation procedures and the measurements of the vacuum level position versus activation layer thickness show that the activation layer for optimally activated GaAs photocathodes with QE of about 20-30% should be treated as a dipole layer. For thick activation layers, the saturation of the vacuum level at the lowest position is observed. The saturation proves, that the activated surface should be treated as a heterojunction

Additional details

Identifiers

Publishing Information

Journal Title
AIP Conference Proceedings
Journal Volume
421
Journal Issue
1
Journal Page Range
p. 493-494
ISSN
0094-243X
CODEN
APCPCS

Conference

Title
7. international workshop on polarized gas targets and polarized beams
Dates
18-22 Aug 1997
Place
Urbana, IL (United States)

Optional Information

Notes
(c) 1998 American Institute of Physics.