Quantitative analysis of surface layers using the Rutherford-backscattering-method

The use of Rutherford backscattering for the investigation of monocrystals overlaid with thin amorphous layers is briefly described. Using silicon crystals covered with silicon nitride and aluminium layers methods are studied, which provide special information about surface layers (mass and area concentration of the layer atoms, composition of the layers, data on the density and thickness etc.). Two methods are shown and compared for the numerical analysis of the experimental data. The first one is based on the decomposition of gamma spectra, the second one is based on the theory of the multiple scattering. (T.G.)