Study of mechanisms leading to stuck bits on SRAM and DRAM memories in the space radiation environment
Description
CNES's onboard experiment results on several satellites have demonstrated that on SRAM and SDRAM memories, a fraction of words suffers from unknown errors that increase the afflicted words' rate of error by orders of magnitude compared to other words. CNES's experts found that these errors were due to the space radiation environment (proton, electrons, heavy ions). The main goals of this Ph.D. thesis are to successfully recreate such errors at ground level using irradiation facilities and particle accelerators, to investigate their behavior and finally, to submit a physical mechanism for memory cell degradation under irradiation, both coherent with experimental data and data obtained from TCAD simulations. (author)
Abstract (French)
Les resultats de differentes experiences du CNES (Centre National d'etudes Spatiales) embarquees sur satellites montrent que des composants SRAM et SDRAM subissent des erreurs atypiques, qui se caracterisent par une fraction d'emplacements memoire presentant des erreurs recurrentes. Ces erreurs non-categorisees representent la quasi-totalite des erreurs detectees sur ces memoires. Une revue interne du CNES a determine que ces erreurs etaient dues aux radiations presentes dans l'environnement spatial (protons, electrons, ions lourds). Cette these s'attache a reproduire ces erreurs atypiques au sol en utilisant des moyens d'irradiation et des accelerateurs de particules, a les caracteriser ainsi qu'a expliquer le mecanisme physique menant a l'apparition de ces cellules endommagees. Le mecanisme physique que nous proposons est coherent avec les donnees obtenues sous faisceau de particules et soutenu par nos simulations de type TCAD. (auteur)
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Additional details
Additional titles
- Original title (French)
- Etude des Mecanismes de Declenchement des Bits Colles dans les SRAM et DRAM en Environnement Radiatif Spatial
Publishing Information
- Imprint Pagination
- 144 p.
- Report number
- FRNC-TH--11798
INIS
- Country of Publication
- France
- Country of Input or Organization
- France
- INIS RN
- 52059189
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Thesis
- Descriptors DEI
- COMPUTER-AIDED DESIGN; COMPUTERIZED SIMULATION; DAMAGE; GAMMA RADIATION; LEAKAGE CURRENT; MATERIALS TESTING; MEMORY DEVICES; NEUTRONS; PENETRATION DEPTH; P-N JUNCTIONS; POST-IRRADIATION EXAMINATION; PROTON BEAMS; RADIATION DOSES; RELIABILITY; STOPPING POWER
- Descriptors DEC
- BARYONS; BEAMS; CURRENTS; DESIGN; DOSES; ELECTRIC CURRENTS; ELECTROMAGNETIC RADIATION; ELEMENTARY PARTICLES; FERMIONS; HADRONS; IONIZING RADIATIONS; NUCLEON BEAMS; NUCLEONS; PARTICLE BEAMS; RADIATIONS; SEMICONDUCTOR JUNCTIONS; SIMULATION; TESTING
Optional Information
- Notes
- 129 refs.; Available from the INIS Liaison Officer for France, see the INIS website for current contact and E-mail addresses