Cubic boron nitride preparation
Description
A method is described for deposition of cubic boron nitride on a substrate, which method comprises the steps of: (a) supporting a substrate on an rf biased electrode in a near vacuum at a base pressure below approximately 30 x 10/sup -6/ torr where oxygen levels in deposited coatings are restricted to below 20 atomic percent, (b) heating the substrate to at least 1300C, (c) introducing a noble gas to a partial pressure not exceeding 20 x 10/sup -3/ torr; (d) introducing nitrogen to a partial pressure not exceeding 5 x 10/sup -3/ torr, (e) cathodically sputtering a BN source, (f) during cathodic sputtering of the BN source, cathodically sputtering a metal dopant source consisting of a metal selected from Groups IA, IVA, VA, VIIA, IB, IIB, IIIB, IVB, and VB of the periodic table such that dopant is deposited at less than 1.5 atomic percent. A cubic boron nitride coating is deposited on the substrate
Availability note (English)
U.S. Commissioner of Patents, Washington, D.C. 20231, USA, $.50.Additional details
Publishing Information
- Imprint Pagination
- vp.
- IPC:
- Int. Cl. C23C 14/34.
- IPC
- Int. Cl. C23C 14/34.
- Patent number
- US patent document 4,683,043/A/
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 19007976
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Non-conventional Literature
- Descriptors DEI
- BORON NITRIDES; CATHODE SPUTTERING; CHEMICAL PREPARATION; DOPED MATERIALS; ELECTRODEPOSITED COATINGS; ELECTRODEPOSITION; ELECTRODES; HEATING; HIGH TEMPERATURE; HIGH VACUUM; METALS; NITROGEN; OXYGEN; PARTIAL PRESSURE; QUANTITY RATIO; RARE GASES; RF SYSTEMS; SUBSTRATES
- Descriptors DEC
- BORON COMPOUNDS; COATINGS; DEPOSITION; ELECTROLYSIS; ELEMENTS; MATERIALS; NITRIDES; NITROGEN COMPOUNDS; NONMETALS; PHYSICAL PROPERTIES; SPUTTERING; SURFACE COATING; SYNTHESIS; THERMODYNAMIC PROPERTIES