Effect of p—d exchange with an itinerant carrier in a GaMnAs quantum dot

Hydrogenic acceptor binding energy as a function of dot radius in a GaMnAs/Ga0.6 Al0.4 As quantum dot is calculated including the exchange interaction of Mn alloy content with an itinerant carrier. Calculations are performed by varying its dot radius, for various Mn alloy contents in GaMnAs quantum dot within a single band effective mass approximation using variational method. The spin polaronic energy of the acceptor impurity for different Mn2+ is evaluated for different dot radii using a mean field theory in the presence of magnetic field strength. The magnetization is computed in the influence of magnetic field and the Mn ions. The effective g-factor of the valence band electron with the inclusion of effects of Mn ion impurities is found in the influence of the magnetic field. The exchange coupling constant is calculated for various magnetic field strengths. The results show that the p—d exchange interaction in the GaMnAs/Ga0.6Al0.4As quantum dot has a strong dependence on spatial confinement, effect of magnetic field strength and the Mn alloy content. Our results are in good agreement with the other investigators. (semiconductor physics)