Published March 1992 | Version v1
Journal article Metadata-only

Effect of laser irradiation on InP crystals stoichiometry

Creators

Description

Laser annealing of InP in air and in liquid nitrogen was studied. Degradation of semiconductors composition in annealed area with redistribution of components as a result of motion of P atoms to the surface was found. Gettering effect at the back side of annealed InP samples was established in the result of photoluminescence investigations

Additional details

Additional titles

Original title (Russian)
Воздействие лазерного излучения на стехиометрию кристаллов InP

Publishing Information

Journal Title
Fizika i Khimiya Obrabotki Materialov
Journal Issue
no.2
Journal Page Range
p. 17-20.
ISSN
0015-3214
CODEN
FKOMAT

INIS

Country of Publication
Russian Federation
Country of Input or Organization
Russian Federation
INIS RN
24018337
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
ANNEALING; CHEMICAL COMPOSITION; ENERGY DENSITY; INDIUM PHOSPHIDES; LASER RADIATION; PHOTOLUMINESCENCE; POLYCRYSTALS; RADIATION EFFECTS
Descriptors DEC
CRYSTALS; ELECTROMAGNETIC RADIATION; EMISSION; HEAT TREATMENTS; INDIUM COMPOUNDS; LUMINESCENCE; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PHOTON EMISSION; PNICTIDES; RADIATIONS