Volume capture effect of 1.5-5.7 MeV electrons into quantum channeling states

The effect of volumetric capture of electrons with the energy E=1.5-5.7 MeV into quantum state during planar and axial channeling in silicon monocrystals has been observed for the first time. As a result of theoretical analysis of the experimental data the effect peculiarities, characteristic of only electron medium energy range, are detected. It is shown that the formed flux of fast electrons in the crystal differs sharply as to its characteristics from the flux in case of direct capture from the crystal input surface. It is quite an independent effect with characteristic properties