Published September 2010
| Version v1
Journal article
Atomistic investigations of misfit dislocation for Pt/SiC(111) interface fracture
Creators
- 1. Department of Physics, Tsinghua University, Beijing 100084 (China)
Description
An interface has some special features in a fracture because of its misfit dislocations. In this work, we use ab initio-based interatomic potentials to study this problem in a Pt/SiC(1 1 1) interface. The whole dynamic process is simulated in the atomistic scale. Micro-cracks and jump points are found in the fracture, which lead to some interesting results
Availability note (English)
Available from http://dx.doi.org/10.1088/0965-0393/18/6/065012Additional details
Identifiers
- DOI
- 10.1088/0965-0393/18/6/065012;
- PII
- S0965-0393(10)53285-6;
Publishing Information
- Journal Title
- Modelling and Simulation in Materials Science and Engineering
- Journal Volume
- 18
- Journal Issue
- 6
- Journal Page Range
- [13 p.]
- ISSN
- 0965-0393
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 45005185
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CRACKS; DISLOCATIONS; FRACTURES; INTERFACES; SILICON CARBIDES; SIMULATION
- Descriptors DEC
- CARBIDES; CARBON COMPOUNDS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; FAILURES; LINE DEFECTS; SILICON COMPOUNDS