Published September 2010 | Version v1
Journal article

Atomistic investigations of misfit dislocation for Pt/SiC(111) interface fracture

  • 1. Department of Physics, Tsinghua University, Beijing 100084 (China)

Description

An interface has some special features in a fracture because of its misfit dislocations. In this work, we use ab initio-based interatomic potentials to study this problem in a Pt/SiC(1 1 1) interface. The whole dynamic process is simulated in the atomistic scale. Micro-cracks and jump points are found in the fracture, which lead to some interesting results

Availability note (English)

Available from http://dx.doi.org/10.1088/0965-0393/18/6/065012

Additional details

Identifiers

DOI
10.1088/0965-0393/18/6/065012;
PII
S0965-0393(10)53285-6;

Publishing Information

Journal Title
Modelling and Simulation in Materials Science and Engineering
Journal Volume
18
Journal Issue
6
Journal Page Range
[13 p.]
ISSN
0965-0393

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
45005185
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
CRACKS; DISLOCATIONS; FRACTURES; INTERFACES; SILICON CARBIDES; SIMULATION
Descriptors DEC
CARBIDES; CARBON COMPOUNDS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; FAILURES; LINE DEFECTS; SILICON COMPOUNDS