Published October 1989
| Version v1
Journal article
Effect of deep centers injected into GaAs1-xPx by ion implantation and electron irradiation on spectral characteristics of photosensitive structures
Description
Photosensitivity spectra of p-n transitions produced by Be+ ion implantation in n-type GaAs1-xPx and after their irradiation with 6 MeV energy and 1015-1017cm-2 dose electrons are investigated. Simultaneous measurement of spectral characteristics of Schottky barrier photosensitivity, p-n transitions and deep center (DC) parameters has shown that the change of DC parameters in the course of producing the device and under the radiation effect appears to be the determining factor of spectral characteristic change
Additional details
Additional titles
- Original title (Russian)
- Влияние глубоких центров, введенных в GaAs
Publishing Information
- Journal Title
- Fizika i Tekhnika Poluprovodnikov
- Journal Volume
- 23
- Journal Issue
- 10
- Series
- Fiz. Tekh. Poluprovodn.
- Journal Page Range
- 1906-1908
- ISSN
- 0015-3222
- CODEN
- FTPPA
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- USSR
- INIS RN
- 21077094
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- BERYLLIUM IONS; E CENTERS; GALLIUM ARSENIDES; GALLIUM PHOSPHIDES; ION IMPLANTATION; KEV RANGE 10-100; MEV RANGE 01-10; N-TYPE CONDUCTORS; P-N JUNCTIONS; PHOTOSENSITIVITY; PHYSICAL RADIATION EFFECTS; SCHOTTKY BARRIER DIODES
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; ATOMIC IONS; CHARGED PARTICLES; COLOR CENTERS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ENERGY RANGE; GALLIUM COMPOUNDS; IONS; KEV RANGE; MATERIALS; MEV RANGE; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PNICTIDES; POINT DEFECTS; RADIATION EFFECTS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR MATERIALS; SENSITIVITY; VACANCIES