Published June 1, 2009 | Version v1
Journal article

Thermoelectric properties of B-doped SrTiO3 singe crystal

  • 1. Department of Materials Science, Shimane University, Matsue, Shimane 690-8504 (Japan)
  • 2. National Institute for Materials Science, Tsukuba, Ibaraki 305-0047 (Japan)
  • 3. Department of Physics, Niigata University, Niigata, Niigata 950-2181 (Japan)
  • 4. Graduate School of Science and Technology, Niigata University, Niigata, Niigata 950-2181 (Japan)

Description

Effect of boron on the electric and thermoelectric properties of SrTiO3 has been studied. Boron-doped SrTiO3 was prepared by vacuum annealing of SrTiO3 single crystals in presence of boron vapors. The crystals show low resistivity ∼0.1 Ω|cm and high Seebeck coefficient of several hundreds μV/K at a room temperature. It was estimated that almost every boron atom incorporated in SrTiO3 crystal provided a charge carrier. Temperature dependence of Seebeck coefficient and figure of merit ZT were measured as a function of carrier concentration.

Availability note (English)

Available from http://dx.doi.org/10.1088/1742-6596/176/1/012042

Additional details

Publishing Information

Journal Title
Journal of Physics. Conference Series (Online)
Journal Volume
176
Journal Issue
1
Journal Page Range
[4 p.]
ISSN
1742-6596

Conference

Title
16. international symposium on boron, borides and related materials
Dates
7-12 Sep 2008
Place
Matsue, Shimane (Japan)