Effects of ion-implantation damage on two-dimensional boron diffusion in silicon

Model two-dimensional distributions of implanted boron and implantation-induced displacement damage near a mask edge are used to calculate the two-dimensional redistribution of boron resulting from a typical short-time anneal. The damage is removed during annealing by releasing vacancies which enhance the diffusion of boron. The effect is that boron preferentially redistributes further into the bulk. Such considerations become increasingly important as metal-oxide-semiconductor field-effect transistors become smaller