Published January 3, 2005 | Version v1
Journal article

Minority carrier transport in p-type Zn0.9Mg0.1O doped with phosphorus

  • 1. SVT Associates, Eden Prairie, Minnesota 55344 (United States)
  • 2. Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States)
  • 3. Physics Department, University of Central Florida, Orlando, Florida 32816-2385 (United States)

Description

Minority carrier diffusion length and lifetime in p-Zn0.9Mg0.1O doped with phosphorus were obtained from local electron beam irradiation measurements. The irradiation resulted in an increase of up to 25% in minority electron diffusion length from the initial value of ∼2.12 μm and in a simultaneous decrease of the peak near-bandedge cathodoluminescence intensity. The observed phenomena are attributed to charging of phosphorus-related deep acceptor level(s), which is consistent with the activation energy of 256±20 meV found for the effect of electron injection in Zn0.9Mg0.1O

Additional details

Identifiers

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
86
Journal Issue
1
Journal Page Range
p. 012105-012105.3
ISSN
0003-6951
CODEN
APPLAB

Optional Information

Notes
(c) 2005 American Institute of Physics