Surface enhanced Raman effect on CVD growth of WS2 film
- 1. Key Laboratory of Radio Frequency and Micro-Nano Electronics of Jiangsu Province, Nanjing 210023 (China)
- 2. College of Electronic and Optical Engineering & College of Microelectronics, Nanjing University of Posts and Telecommunications, Nanjing 210023 (China)
- 3. Fujian Provincial Key Laboratory of Semiconductors and Applications, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Department of Physics, Xiamen University, Xiamen 361005 (China)
- 4. Jiujiang Resarch Institute of Xiamen University, Jiujiang 332000 (China)
Description
Highlights: • Large area WS2 flakes are prepared via chemical vapor deposition (CVD) method. • The as-grown WS2 films are demonstrated to be excellent as substrates for SERS. • The Raman enhancement effect depends crucially on the layer number of WS2 film. Chemical vapor deposition (CVD) method was used to grow large area and layer controllable WS2 film. Our results show that the as grown WS2 film is an excellent substrate for surface enhanced Raman scattering (SERS). The Raman enhancement effect depends crucially on the layer number of WS2 film: monolayer WS2 offers the strongest Raman signal, and the Raman enhancement effect gradually decreases with the increase in the layer number of WS2. Further analysis indicates that this transition originates from the charge transfer yield between the R6G molecules and the underlying WS2 substrate.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.cplett.2018.07.040Additional details
Identifiers
- DOI
- 10.1016/j.cplett.2018.07.040;
- PII
- S0009261418305864;
Publishing Information
- Journal Title
- Chemical Physics Letters
- Journal Volume
- 707
- Journal Page Range
- p. 71-74
- ISSN
- 0009-2614
- CODEN
- CHPLBC
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 53001990
- Subject category
- S74: ATOMIC AND MOLECULAR PHYSICS;
- Descriptors DEI
- CHEMICAL VAPOR DEPOSITION; FILMS; LAYERS; MOLECULES; RAMAN EFFECT; SIGNALS; SUBSTRATES; SURFACES; TUNGSTEN SULFIDES; YIELDS
- Descriptors DEC
- CHALCOGENIDES; CHEMICAL COATING; DEPOSITION; REFRACTORY METAL COMPOUNDS; SULFIDES; SULFUR COMPOUNDS; SURFACE COATING; TRANSITION ELEMENT COMPOUNDS; TUNGSTEN COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2018 Published by Elsevier B.V.