Published April 1990
| Version v1
Journal article
Vacuum annealing effects on the surface stoichiometry of InGaAsP
Creators
- 1. Dept. of Electrical and Computer Engineering, Rutgers Univ., Piscataway, NJ (United States)
- 2. AT and T Bell Lab., Murray Hill, NJ (United States)
Description
The use of the binary and quaternary systems InP and In1-xGaxAs1-yPy for the fabrication of long wavelengths (i.e., 1.3-1.6μm) LED's and lasers is a well-established approach. Our work is focused on the quaternay (Q) materials, with the major emphasis being on the surface chemistry of epitaxially grown Q-layers, lattice matched to InP and photoluminescing at about 1.3 μm. In this paper the authors report on a surface stoichiometry shift that has been observed on annealing Q-layers up to about 600 degrees C in a vacuum (∼10-9 Torr)
Additional details
Publishing Information
- Journal Title
- Journal of the Electrochemical Society
- Journal Volume
- 137
- Journal Issue
- 4
- Series
- J. Electrochem. Soc.
- Journal Page Range
- 1319-1320
- ISSN
- 0013-4651
- CODEN
- JESOA
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 23042525
- Subject category
- S36: MATERIALS SCIENCE; S37: INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY;
- Descriptors DEI
- ANNEALING; BINARY ALLOY SYSTEMS; CHEMICAL COMPOSITION; CHEMICAL SHIFT; EPITAXY; FABRICATION; GALLIUM ARSENIDES; GALLIUM PHOSPHIDES; INDIUM PHOSPHIDES; LIGHT EMITTING DIODES; QUATERNARY COMPOUNDS; SEMICONDUCTOR LASERS; STOICHIOMETRY; SURFACE PROPERTIES; VACUUM STATES
- Descriptors DEC
- ALLOY SYSTEMS; AMINES; AMPLIFIERS; ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL GROWTH METHODS; EQUIPMENT; GALLIUM COMPOUNDS; HEAT TREATMENTS; INDIUM COMPOUNDS; LASERS; ORGANIC COMPOUNDS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PNICTIDES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SOLID STATE LASERS