Published July 1988
| Version v1
Journal article
Properties of implanted surface layers Hg1-xCdxTe
Description
Distributions of mercury atoms, radiation-induced disturbances of the crystalline structure and electron concentration in the depth of the surface layer of implanted crystals Hg1-xCdxTe are investigated. It is supposed that the main factors of formation of profiles of the space distribution of the electron concentration are diffusion of interstitial mercury to the surface with its subsequent atomization and capturing of interstitial mercury by sizeable defects
Additional details
Additional titles
- Original title (Russian)
- Свойства имплантированных поверхностных слоев Хг
Publishing Information
- Journal Title
- Poverkhnost': Fizika, Khimiya, Mekhanika
- Journal Issue
- no.7
- Series
- Poverkhn.: Fiz., Khim., Mekh.
- CODEN
- PFKMD
INIS
- Country of Publication
- USSR
- Country of Input or Organization
- USSR
- INIS RN
- 20021853
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ARGON IONS; CADMIUM ALLOYS; CRYSTAL DEFECTS; DIFFUSION; ION IMPLANTATION; KEV RANGE; MERCURY ALLOYS; PHYSICAL RADIATION EFFECTS; SPATIAL DISTRIBUTION; SPECTRA; SURFACE PROPERTIES; TELLURIDES
- Descriptors DEC
- ALLOYS; CHALCOGENIDES; CHARGED PARTICLES; CRYSTAL STRUCTURE; DISTRIBUTION; ENERGY RANGE; IONS; RADIATION EFFECTS; TELLURIUM COMPOUNDS