Spectroscopic Investigation Of (NH4)2S Treated GaSeTe For Radiation Detector Applications

The surface of the layered III-VI chalcogenide semiconductor GaSeTe was treated with (NH4)2S at 60 C to modify the surface chemistry and determine the effect on transport properties. Room temperature photoluminescence (PL) measurements were used to assess the effect of the (NH4)2S treatment on surface defect states. Evaluation of the subsequent surface chemistry was performed with high-resolution core-level photoemission measurements. Metal overlayers were deposited on the (NH4)2S treated surfaces and the I-V characteristics were measured. The measurements were correlated to understand the effect of (NH4)2S modification of the interfacial electronic structure with the goal of optimizing the metal/GaSeTe interface for radiation detector devices.