Evidence of shallow positron traps in ion-implanted InP observed by maximum entropy reconstruction of positron lifetime distribution: a test of MELT

A newly developed maximum entropy method, which was realized by the computer program MELT introduced by Shukla et al., was used to analyze positron lifetime spectra measured in semiconductors. Several simulation studies were done to test the performance of this algorithm. Reliable reconstruction of positron lifetime distributions can be extracted at relatively lower counts, which shows the applicability and superiority of this method. Two positron lifetime spectra measured in ion-implanted p-InP(Zn) at 140 and 280 K, respectively were analyzed by this program. The lifetime distribution differed greatly for the two temperatures, giving direct evidence of the existence of shallow positron traps at low temperature. (Copyright (c) 1999 Elsevier Science B.V., Amsterdam. All rights reserved.)