Potentials and challenges of integration for complex metal oxides in CMOS devices and beyond
Creators
- 1. Department of Chemical and Biomolecular Engineering, University of California Los Angeles, Los Angeles, CA 90095 (United States)
Description
This review focuses on recent accomplishments on complex metal oxide based multifunctional materials and the potential they hold in advancing integrated circuits. It begins with metal oxide based high-κ materials to highlight the success of their integration since 45 nm complementary metal–oxide–semiconductor (CMOS) devices. By simultaneously offering a higher dielectric constant for improved capacitance as well as providing a thicker physical layer to prevent the quantum mechanical tunnelling of electrons, high-κ materials have enabled the continued down-scaling of CMOS based devices. The most recent technology driver has been the demand to lower device power consumption, which requires the design and synthesis of novel materials, such as complex metal oxides that exhibit remarkable tunability in their ferromagnetic, ferroelectric and multiferroic properties. These properties make them suitable for a wide variety of applications such as magnetoelectric random access memory, radio frequency band pass filters, antennae and magnetic sensors. Single-phase multiferroics, while rare, offer unique functionalities which have motivated much scientific and technological research to ascertain the origins of their multiferroicity and their applicability to potential devices. However, due to the weak magnetoelectric coupling for single-phase multiferroics, engineered multiferroic composites based on magnetostrictive ferromagnets interfacing piezoelectrics or ferroelectrics have shown enhanced multiferroic behaviour from effective strain coupling at the interface. In addition, nanostructuring of the ferroic phases has demonstrated further improvement in the coupling effect. Therefore, single-phase and engineered composite multiferroics consisting of complex metal oxides are reviewed in terms of magnetoelectric coupling effects and voltage controlled ferromagnetic properties, followed by a review on the integration challenges that need to be overcome to realize the materials' full potential. (topical review)
Availability note (English)
Available from http://dx.doi.org/10.1088/0022-3727/48/6/063001Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Physics. D, Applied Physics
- Journal Volume
- 48
- Journal Issue
- 6
- Journal Page Range
- [25 p.]
- ISSN
- 0022-3727
- CODEN
- JPAPBE
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 46055642
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- CAPACITANCE; COUPLING; ELECTRIC POTENTIAL; ELECTRONS; FERROELECTRIC MATERIALS; INTEGRATED CIRCUITS; INTERFACES; MAGNETOSTRICTION; METALS; NANOSTRUCTURES; PERMITTIVITY; PIEZOELECTRICITY; POTENTIALS; QUANTUM MECHANICS; RADIOWAVE RADIATION; SEMICONDUCTOR MATERIALS; SENSORS; STRAINS; TUNNEL EFFECT
- Descriptors DEC
- DIELECTRIC MATERIALS; DIELECTRIC PROPERTIES; ELECTRICAL PROPERTIES; ELECTRICITY; ELECTROMAGNETIC RADIATION; ELECTRONIC CIRCUITS; ELEMENTARY PARTICLES; ELEMENTS; FERMIONS; LEPTONS; MAGNETIC PROPERTIES; MATERIALS; MECHANICS; MICROELECTRONIC CIRCUITS; PHYSICAL PROPERTIES; RADIATIONS