Published February 12, 1985
| Version v1
Patent
Etching techniques
Description
A highly selective-greater than 100 to 1-etch for silicon, tantalum, tantalum silicide and tantalum nitride is achieved by using polyatomic halogen fluorides. The selectivity is achievable without employing plasmas or wet etching
Availability note (English)
U.S. Commissioner of Patents, Washington, D.C. 20231, USA, $.50.Additional details
Publishing Information
- Imprint Pagination
- v p.
- IPC:
- Int. Cl. B44C 1/22; C03C 15/00; C03C 25/06; C23F 1/02.
- IPC
- Int. Cl. B44C 1/22; C03C 15/00; C03C 25/06; C23F 1/02.
- Patent number
- US patent document 4,498,953/A/
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 17005946
- Subject category
- S36: MATERIALS SCIENCE; S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Non-conventional Literature
- Descriptors DEI
- ETCHING; FLUORINE COMPOUNDS; HALOGEN COMPOUNDS; SILICON; TANTALUM; TANTALUM NITRIDES; TANTALUM SILICIDES
- Descriptors DEC
- ELEMENTS; METALS; NITRIDES; NITROGEN COMPOUNDS; SEMIMETALS; SILICIDES; SILICON COMPOUNDS; TANTALUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS; TRANSITION ELEMENTS
Optional Information
- Notes
- PAT-APPL-517754.