Enhancement of the light-scattering ability of Ga-doped ZnO thin films using SiO_x nano-films prepared by atmospheric pressure plasma deposition system

To enhance the light-trapping qualities of silicon thin-film solar cells, the use of transparent conductive oxide with high haze and high conductivity is essential. This study investigated an eco-friendly technique that used bilayer Ga-doped zinc oxide/SiO_x films prepared with an atmospheric pressure plasma jet to achieve high haze and low resistivity. A minimum resistivity of 6.00 × 10⁻⁴ Ω·cm was achieved at 8 at.% gallium doping. Examination of X-ray diffraction spectra showed that increased film thickness led to increased carrier concentration in GZO bilayers. The optimal bilayer GZO film achieved considerably higher haze values in the visible and NIR regions, compared with Asahi U-type fluorine doped tin oxide. - Highlights: • Ga-doped ZnO (GZO) and SiO_x deposited by atmospheric pressure plasma jet (APPJ) • Deposition uses a water-based precursor and low substrate temperature (< 150 °C). • SiO_x buffer layers deposited by APPJ can control haze value of Ga-doped ZnO films. • GZO/SiO_x achieved the resistivity of 6.00 × 10⁻⁴ Ω·cm and haze of 21.5% at 550 nm