Published February 1, 2010 | Version v1
Journal article

Surface photovoltage and photoluminescence spectroscopy of self-assembled InAs/InP quantum wires

  • 1. Faculty of Physics, Sofia University, 5, blvd. J. Bourchier, Sofia-1164 (Bulgaria)
  • 2. Institut de Ciencia dels Materials, University de Valencia, PO Box 22085E-46071, Valencia (Spain)
  • 3. Department of Physics, University of Ottawa, Ottawa ON, K1N 6N5 (Canada)
  • 4. Instituto de Microelectronica de Madrid (CNM- CSIC), Isaac Newton 8, Tres Cantos, 28760, Madrid (Spain)

Description

The optical properties of InAs/InP multi-layer quantum wire (QWR) structures of various spacer thicknesses have been investigated by means of room temperature surface photovoltage and photoluminescence spectroscopy. Combined with empirical tight binding calculations, the spectra have revealed transitions assigned to QWR families with heights equal to integer number of 5, 6 and 7 monolayers. From the comparison of the experimental and theoretical results the atomic concentration of phosphorus in the wires has been estimated.

Availability note (English)

Available from http://dx.doi.org/10.1088/1742-6596/210/1/012041

Additional details

Publishing Information

Journal Title
Journal of Physics. Conference Series (Online)
Journal Volume
210
Journal Issue
1
Journal Page Range
[4 p.]
ISSN
1742-6596

Conference

Title
11. international conference on optics of excitons in confined systems
Acronym
OECS11
Dates
7-11 Sep 2009
Place
Madrid (Spain)